PART |
Description |
Maker |
SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg,快速开关MOSFET N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和,快速开关MOSFET N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc. Vishay Siliconix
|
SI4800BDY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay
|
SI9422DY |
N-Channel Reduced Qg/ Fast Switching MOSFET N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
SI4888DY |
N-Channel Reduced Qg, Fast Switching MOSFET
|
VISAY[Vishay Siliconix]
|
SI4368DY SI4368DY-T1-E3 SI4368DY-E3 |
N-Channel Reduced Qg, Fast Switching WFET N沟道减少Qg和快速切换WFET
|
Vishay Intertechnology, Inc. Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
|
SI7860DP |
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和,快速开关MOSFET
|
Vishay Intertechnology, Inc. Vishay Siliconix
|
SI4800BDY SI4800BDY-T1-E3 |
N-Channel Reduced Qg, Fast Switching MOSFET N-Channel Reduced Qg, Fast Switching MOSFET
|
Vishay Siliconix
|
WPCN381U |
Legacy-Reduced SuperI/O with Fast Infrared Port, Two Serial Ports and GPIOs
|
Winbond
|
STE36N50-DK |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics ST Microelectronics
|
STY60NA20 6123 |
N-CHANNEL 200V - 0.030 OHM - 60A - FAST POWER MOS TRANSISTOR N - CHANNEL 200V - 0.030ohm - 60 A - Max247 FAST POWER MOS TRANSISTOR From old datasheet system N - CHANNEL 200V - 0.030 - 60 A - Max247 FAST POWER MOS TRANSISTOR N-CHANNEL Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|